Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET P-CH 55V 11A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,328 |
|
MOSFET (Metal Oxide) | 55V | 11A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | ±20V | - | 38W (Tc) | 175 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 200V 9.5A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,656 |
|
MOSFET (Metal Oxide) | 200V | 9.5A (Tc) | 10V | 4V @ 1mA | - | 530pF @ 25V | ±20V | - | 75W (Tc) | 400 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 25V 80A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,240 |
|
MOSFET (Metal Oxide) | 25V | 80A (Tc) | 4.5V, 10V | 2V @ 50µA | 25nC @ 5V | 3110pF @ 15V | ±20V | - | 94W (Tc) | 4.6 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 55V 19A TO-262
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock15,948 |
|
MOSFET (Metal Oxide) | 55V | 19A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | ±20V | - | 3.8W (Ta), 68W (Tc) | 100 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Renesas Electronics America |
MOSFET N-CH 40V 100A TO-263
|
Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
Stock3,264 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | - | 120nC @ 10V | 7050pF @ 25V | ±20V | - | 1.8W (Ta), 176W (Tc) | 2.3 mOhm @ 50A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
||
ON Semiconductor |
MOSFET N-CH 500V 2.6A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock26,220 |
|
MOSFET (Metal Oxide) | 500V | 2.6A (Tc) | 10V | 4.5V @ 50µA | 16nC @ 10V | 329pF @ 25V | ±30V | - | 58W (Tc) | 3.3 Ohm @ 1.15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 30A SOP-8 ADV
|
Package: 8-PowerVDFN |
Stock5,504 |
|
MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 34nC @ 10V | 2846pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 6.2 mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
ON Semiconductor |
MOSFET N-CH 40V 38A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,840 |
|
MOSFET (Metal Oxide) | 40V | 7.6A (Ta), 38A (Tc) | 5V, 10V | 3.5V @ 250µA | 20nC @ 10V | 1000pF @ 32V | ±20V | - | 75W (Tc) | 26 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 12V 3.6A 2X2 4-MFP
|
Package: 4-XFBGA, CSPBGA |
Stock86,880 |
|
MOSFET (Metal Oxide) | 12V | 3.6A (Ta) | 1.8V, 4.5V | 950mV @ 250µA | 21nC @ 4.5V | - | ±8V | - | 1.47W (Ta) | 55 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA, CSPBGA |
||
Vishay Siliconix |
MOSFET N-CH 400V 10A TO-220-5
|
Package: TO-220-5 |
Stock3,200 |
|
MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 4V @ 250µA | 66nC @ 10V | 1200pF @ 25V | ±20V | Current Sensing | 125W (Tc) | 550 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
STMicroelectronics |
MOSFET N-CH 650V 9A IPAK
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock2,160 |
|
MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 850pF @ 50V | ±25V | - | 90W (Tc) | 480 mOhm @ 4.5A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Microsemi Corporation |
POWER MOSFET - SIC
|
Package: D-3 Module |
Stock7,504 |
|
SiCFET (Silicon Carbide) | 1200V | 25A (Tc) | - | 2.5V @ 1mA | 72nC @ 20V | - | - | - | 175W (Tc) | 175 mOhm @ 10A, 20V | -55°C ~ 175°C (TJ) | Chassis Mount | D3 | D-3 Module |
||
Nexperia USA Inc. |
MOSFET N-CH 40V 100A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,584 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 5V, 10V | 2.1V @ 1mA | 69.5nC @ 5V | 9150pF @ 25V | ±10V | - | 234W (Tc) | 2.7 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microchip Technology |
MOSFET N-CH 40V 0.45A TO92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,800 |
|
MOSFET (Metal Oxide) | 40V | 450mA (Ta) | 3V, 10V | 1.6V @ 500µA | - | 70pF @ 20V | ±20V | - | 1W (Tc) | 1.8 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Vishay Siliconix |
MOSFET N-CH 100V 9.2A TO-262
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock40,692 |
|
MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 4V, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | ±10V | - | 60W (Tc) | 270 mOhm @ 5.5A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5A VS6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock2,496 |
|
MOSFET (Metal Oxide) | 20V | 5A (Ta) | 2.5V, 4.5V | 1.2V @ 200µA | 10nC @ 5V | 690pF @ 10V | ±12V | - | 700mW (Ta) | 55 mOhm @ 2.5A, 4.5V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET P-CH 12V 3.5A SC70FL
|
Package: 3-SMD, Flat Leads |
Stock7,472 |
|
MOSFET (Metal Oxide) | 12V | 3.5A (Ta) | 0.9V, 2.5V | 800mV @ 1mA | 6.2nC @ 2.5V | 1010pF @ 6V | ±5V | - | 1W (Ta) | 69 mOhm @ 1.5A, 2.5V | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
||
STMicroelectronics |
MOSFET N-CH 600V TO-220FP
|
Package: - |
Stock3,504 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
STMicroelectronics |
MOSFET N-CH 600V 4A TO-220FP
|
Package: TO-220-3 Full Pack |
Stock534,000 |
|
MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 4.5V @ 50µA | 26nC @ 10V | 510pF @ 25V | ±30V | - | 25W (Tc) | 2 Ohm @ 2A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Diodes Incorporated |
MOSFET N-CH 60V 0.4A DFN1212-3
|
Package: 3-UDFN |
Stock5,456 |
|
MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 1.8V, 4V | 1V @ 250µA | 0.55nC @ 4.5V | 36pF @ 25V | ±20V | - | 500mW (Ta) | 2 Ohm @ 100mA, 4V | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1212-3 | 3-UDFN |
||
IXYS |
2500V TO 4500V VERY HI VOLT PWR
|
Package: TO-247-3 Variant |
Stock6,144 |
|
MOSFET (Metal Oxide) | 4500V | 1A (Tc) | 10V | 6V @ 250µA | 46nC @ 10V | 1700pF @ 25V | ±20V | - | 520W (Tc) | 80 Ohm @ 50mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247HV | TO-247-3 Variant |
||
Infineon Technologies |
MOSFET N-CH 40V 90A TO262-3-1
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock12,216 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4V @ 95µA | 118nC @ 10V | 9430pF @ 25V | ±20V | - | 150W (Tc) | 2.5 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 6.5A TO-220F
|
Package: TO-220-3 Full Pack |
Stock17,844 |
|
MOSFET (Metal Oxide) | 600V | 6.5A (Tc) | 10V | 5V @ 250µA | 17nC @ 10V | 730pF @ 25V | ±30V | - | 33W (Tc) | 1.25 Ohm @ 3.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET N-CH 800V 4.1A TO-262
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock16,680 |
|
MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 4V @ 250µA | 78nC @ 10V | 1300pF @ 25V | ±20V | - | 125W (Tc) | 3 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Diodes Incorporated |
MOSFET N-CH 20V 1.73A 3UDFN
|
Package: 3-UDFN |
Stock4,048 |
|
MOSFET (Metal Oxide) | 20V | 1.21A (Ta) | 1.5V, 4.5V | 950mV @ 250µA | 2nC @ 4.5V | 67.62pF @ 25V | ±8V | - | 470mW (Ta) | 200 mOhm @ 900mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1212-3 | 3-UDFN |
||
GeneSiC Semiconductor |
TRANS SJT 1200V 15A
|
Package: - |
Stock21,036 |
|
SiC (Silicon Carbide Junction Transistor) | 1200V | 15A (Tc) | - | - | - | - | - | - | 106W (Tc) | - | 175°C (TJ) | - | - | - |
||
STMicroelectronics |
MOSFET N-CH 800V 2A TO220FP
|
Package: TO-220-3 Full Pack |
Stock14,982 |
|
MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 5V @ 100µA | 3nC @ 10V | 95pF @ 100V | 30V | - | 20W (Tc) | 4.5 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Diodes Incorporated |
MOSFET P-CH 20V U-WLB1515-9
|
Package: 9-UFBGA, WLBGA |
Stock24,576 |
|
MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 1.8V, 4.5V | 1.1V @ 250µA | 7nC @ 4.5V | 500pF @ 10V | -6V | - | 1W (Ta) | 33 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-WLB1515-9 | 9-UFBGA, WLBGA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 20A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock170,244 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 5V @ 250µA | 98nC @ 10V | 3080pF @ 25V | ±30V | - | 208W (Tc) | 190 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Rohm Semiconductor |
MOSFET N-CH 50V 0.2A UMT3
|
Package: SC-70, SOT-323 |
Stock375,732 |
|
MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 1.2V, 4.5V | 1V @ 1mA | - | 25pF @ 10V | ±8V | - | 200mW (Ta) | 2.2 Ohm @ 200mA, 4.5V | 150°C (TJ) | Surface Mount | UMT3 | SC-70, SOT-323 |