Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 100A TO220-3
|
Package: TO-220-3 |
Stock3,440 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 5110pF @ 25V | ±20V | - | 300W (Tc) | 5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 80V 80A TO262-3
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2,128 |
|
MOSFET (Metal Oxide) | 80V | 80A (Tc) | 6V, 10V | 3.5V @ 73µA | 56nC @ 10V | 3840pF @ 40V | ±20V | - | 136W (Tc) | 7 mOhm @ 73A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 25V 89A TDSON-8
|
Package: 8-PowerTDFN |
Stock3,488 |
|
MOSFET (Metal Oxide) | 25V | 19A (Ta), 89A (Tc) | 4.5V, 10V | 2V @ 35µA | 21nC @ 5V | 2670pF @ 15V | ±20V | - | 2.8W (Ta), 63W (Tc) | 4.8 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 80A TO-220
|
Package: TO-220-3 |
Stock14,196 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 7020pF @ 25V | ±20V | - | 300W (Tc) | 3.4 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 75V 100A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,176 |
|
MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 6020pF @ 25V | ±20V | - | 300W (Tc) | 6.8 mOhm @ 66A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 40V 130A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,816 |
|
MOSFET (Metal Oxide) | 40V | 130A (Tc) | 4.5V, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | ±16V | - | 3.8W (Ta), 200W (Tc) | 6.5 mOhm @ 78A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET DFN 5X6
|
Package: 8-VDFN Exposed Pad |
Stock3,008 |
|
- | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | Surface Mount | 8-DFN (5x6) | 8-VDFN Exposed Pad |
||
Diodes Incorporated |
MOSFET N-CH 20V 6.5A 8-SOP
|
Package: - |
Stock4,848 |
|
MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | - | 700mV @ 250µA | 8.5nC @ 4.5V | 151pF @ 10V | - | - | - | 36 mOhm @ 3.5A, 1.8V | - | Surface Mount | - | - |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 20A DFN5X6
|
Package: 8-PowerSMD, Flat Leads |
Stock144,000 |
|
MOSFET (Metal Oxide) | 30V | 20A (Ta), 30A (Tc) | 4.5V, 10V | 2.6V @ 250µA | 22.5nC @ 10V | 951pF @ 15V | ±20V | - | 4.1W (Ta), 25W (Tc) | 8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Vishay Siliconix |
MOSFET N-CH 55V 30A TO252
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock205,056 |
|
MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 18nC @ 5V | 1175pF @ 25V | ±20V | - | 50W (Tc) | 20 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 1000V 14A TO-247
|
Package: TO-247-3 |
Stock390,000 |
|
MOSFET (Metal Oxide) | 1000V | 14A (Tc) | 10V | 4.5V @ 4mA | 220nC @ 10V | 4500pF @ 25V | ±20V | - | 360W (Tc) | 750 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
Vishay Siliconix |
MOSFET P-CH 20V 7.5A 1212-8
|
Package: PowerPAK? 1212-8 |
Stock14,640 |
|
MOSFET (Metal Oxide) | 20V | 7.5A (Ta) | 1.8V, 4.5V | 1V @ 300µA | 41nC @ 4.5V | - | ±8V | - | 1.5W (Ta) | 19 mOhm @ 11.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
ON Semiconductor |
MOSFET N-CH 30V 6.4A 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock705,600 |
|
MOSFET (Metal Oxide) | 30V | 6.4A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 15nC @ 4.5V | 950pF @ 24V | ±20V | - | 830mW (Ta) | 12 mOhm @ 10.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET N-CH 60V 24A IPAK
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock4,832 |
|
MOSFET (Metal Oxide) | 60V | 24A (Ta) | 10V | 4V @ 250µA | 48nC @ 10V | 1200pF @ 25V | ±20V | - | 1.36W (Ta), 62.5W (Tj) | 42 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 35.6A TO-3PF
|
Package: SC-94 |
Stock10,404 |
|
MOSFET (Metal Oxide) | 80V | 35.6A (Tc) | 10V | 4V @ 250µA | 50nC @ 10V | 1430pF @ 25V | ±25V | - | 83W (Tc) | 34 mOhm @ 17.8A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3PF | SC-94 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 4.5A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,856 |
|
MOSFET (Metal Oxide) | 200V | 4.5A (Tc) | 5V, 10V | 2V @ 250µA | 6.2nC @ 5V | 325pF @ 25V | ±25V | - | 3.13W (Ta), 52W (Tc) | 1.2 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 55V 100A TO263-3
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,704 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 230nC @ 10V | 5660pF @ 25V | ±20V | - | 300W (Tc) | 4.4 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH TO252-3
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,752 |
|
MOSFET (Metal Oxide) | 100V | 90A (Tc) | 4.5V, 10V | 2.1V @ 90µA | 98nC @ 10V | 6250pF @ 25V | ±16V | - | 136W (Tc) | 6.6 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Microsemi Corporation |
MOSFET N-CH 200V 56A TO-247
|
Package: TO-247-3 |
Stock25,200 |
|
MOSFET (Metal Oxide) | 200V | 56A (Tc) | 10V | 4V @ 1mA | 195nC @ 10V | 4860pF @ 25V | ±30V | - | 300W (Tc) | 45 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Rohm Semiconductor |
MOSFET P-CH 20V 2.5A TSMT6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock380,760 |
|
MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 2.5V, 4.5V | 2V @ 1mA | 6.4nC @ 4.5V | 580pF @ 10V | ±12V | - | 1.25W (Ta) | 100 mOhm @ 2.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, SUPER
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,360 |
|
MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 4V @ 250µA | 10.7nC @ 10V | 555pF @ 100V | ±30V | - | 62.5W (Tc) | 750 mOhm @ 1.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
||
ON Semiconductor |
MOSFET N-CH 600V 4A IPAK
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock212,544 |
|
MOSFET (Metal Oxide) | 600V | 4.1A (Tc) | 10V | 4.5V @ 50µA | 29nC @ 10V | 640pF @ 25V | ±30V | - | 83W (Tc) | 2 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 150V 26A PPAK SO-8
|
Package: PowerPAK? SO-8 |
Stock85,296 |
|
MOSFET (Metal Oxide) | 150V | 26A (Tc) | 8V, 10V | 4.5V @ 250µA | 43nC @ 10V | 1735pF @ 50V | ±20V | - | 5.2W (Ta), 64W (Tc) | 45 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Rohm Semiconductor |
MOSFET N-CH 50V 0.2A 3VMT
|
Package: SOT-723 |
Stock576,000 |
|
MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 1.2V, 4.5V | 1V @ 1mA | - | 25pF @ 10V | ±8V | - | 150mW (Ta) | 2.2 Ohm @ 200mA, 4.5V | 150°C (TJ) | Surface Mount | VMT3 | SOT-723 |
||
EPC |
MOSFET NCH 40V 31A DIE
|
Package: Die |
Stock49,674 |
|
GaNFET (Gallium Nitride) | 40V | 31A (Ta) | 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | +6V, -4V | - | - | 2.4 mOhm @ 30A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 32A I2PAK
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock33,960 |
|
MOSFET (Metal Oxide) | 30V | 32A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 10.7nC @ 10V | 552pF @ 15V | ±20V | - | 47W (Tc) | 17 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 100V 57A TO-220AB
|
Package: TO-220-3 |
Stock814,860 |
|
MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | ±20V | - | 200W (Tc) | 23 mOhm @ 28A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET P-CH 240V 0.2A TO92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock137,856 |
|
MOSFET (Metal Oxide) | 240V | 200mA (Ta) | 3.5V, 10V | 2V @ 1mA | - | 200pF @ 25V | ±40V | - | 750mW (Ta) | 9 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Vishay Siliconix |
MOSFET P-CH 200V 6.5A TO-220AB
|
Package: TO-220-3 |
Stock223,404 |
|
MOSFET (Metal Oxide) | 200V | 6.5A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 700pF @ 25V | ±20V | - | 74W (Tc) | 800 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Texas Instruments |
MOSFET N-CH 30V 65A 8SON
|
Package: 8-PowerTDFN |
Stock944,592 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta), 65A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 3.6nC @ 4.5V | 530pF @ 15V | ±20V | - | 3W (Ta) | 10.8 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |