Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 96A TO-262
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock8,796 |
|
MOSFET (Metal Oxide) | 100V | 96A (Tc) | 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | ±20V | - | 250W (Tc) | 10 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Global Power Technologies Group |
MOSFET N-CH 600V 7.5A TO220F
|
Package: TO-220-3 Full Pack |
Stock3,856 |
|
MOSFET (Metal Oxide) | 600V | 7.5A (Tc) | 10V | 5V @ 250µA | 23nC @ 10V | 1063pF @ 25V | ±30V | - | 39W (Tc) | 1.2 Ohm @ 3.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Diodes Incorporated |
MOSFET P-CH 30V 6.4A 8SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock438,900 |
|
MOSFET (Metal Oxide) | 30V | 6.4A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 31.6nC @ 10V | 1678pF @ 15V | ±20V | - | 1.56W (Ta) | 25 mOhm @ 7.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
IXYS |
MOSFET N-CH 55V ISOPLUS 220
|
Package: ISOPLUS220? |
Stock4,144 |
|
MOSFET (Metal Oxide) | 55V | - | - | - | - | - | - | - | - | - | - | Through Hole | ISOPLUS220? | ISOPLUS220? |
||
ON Semiconductor |
MOSFET N-CH 30V 7.8A SO8FL
|
Package: 8-PowerTDFN, 5 Leads |
Stock362,400 |
|
MOSFET (Metal Oxide) | 30V | 7.8A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 15nC @ 4.5V | 970pF @ 24V | ±20V | - | 1W (Ta) | 10 mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 43A TO-220AB
|
Package: TO-220-3 |
Stock3,280 |
|
MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 4V @ 250µA | 175nC @ 20V | 2730pF @ 25V | ±20V | - | 230W (Tc) | 42 mOhm @ 43A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET P-CH 20V 2.3A 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,976 |
|
MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 18nC @ 4.5V | 750pF @ 16V | ±10V | Schottky Diode (Isolated) | 710mW (Ta) | 90 mOhm @ 2.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Nexperia USA Inc. |
MOSFET N-CH 75V 75A TO220AB
|
Package: TO-220-3 |
Stock2,720 |
|
MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 4V @ 1mA | - | 6760pF @ 25V | ±20V | - | 230W (Tc) | 9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 25V 100A LFPAK
|
Package: SC-100, SOT-669 |
Stock5,328 |
|
MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 34.7nC @ 4.5V | 4470pF @ 12V | ±20V | - | 62.5W (Tc) | 2.5 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
STMicroelectronics |
MOSFET N-CH 650V 10A TO220
|
Package: TO-220-3 |
Stock4,400 |
|
MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 4.5V @ 100µA | 42nC @ 10V | 1180pF @ 25V | ±30V | - | 150W (Tc) | 1 Ohm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 100V 2A SOT-223
|
Package: TO-261-4, TO-261AA |
Stock276,780 |
|
MOSFET (Metal Oxide) | 100V | 2A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 305pF @ 25V | ±20V | - | 2.5W (Tc) | 400 mOhm @ 1A, 10V | 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH BARE DIE
|
Package: - |
Stock2,352 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 55V 30A I-PAK
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,488 |
|
MOSFET (Metal Oxide) | 55V | 30A (Tc) | 5V, 10V | 3V @ 250µA | 92nC @ 10V | 1870pF @ 25V | ±16V | - | 120W (Tc) | 14 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 100V 17A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,568 |
|
MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 2V @ 250µA | 34nC @ 5V | 800pF @ 25V | ±16V | - | 79W (Tc) | 105 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N CH 30V 21A PQFN5X6
|
Package: 8-TQFN Exposed Pad |
Stock48,000 |
|
MOSFET (Metal Oxide) | 30V | 21A (Ta), 83A (Tc) | 4.5V, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | ±20V | - | 3.4W (Ta), 54W (Tc) | 4.9 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-TQFN Exposed Pad |
||
Vishay Siliconix |
MOSFET P-CH 60V 8.8A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock11,820 |
|
MOSFET (Metal Oxide) | 60V | 8.8A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 280 mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V 40V POWERDI506
|
Package: 8-PowerTDFN |
Stock4,496 |
|
MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 91nC @ 10V | 4234pF @ 20V | ±25V | - | 2.6W (Ta) | 10 mOhm @ 9.8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Rohm Semiconductor |
MOSFET N-CH 20V 1.5A WEMT6
|
Package: SOT-563, SOT-666 |
Stock96,000 |
|
MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 110pF @ 10V | ±10V | - | 400mW (Ta) | 180 mOhm @ 1.5A, 4.5V | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
||
Diodes Incorporated |
MOSFET N-CH 12V 3.2A DFN1010-3
|
Package: 3-XFDFN |
Stock3,264 |
|
MOSFET (Metal Oxide) | 12V | 3.2A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | 375pF @ 10V | ±8V | - | 500mW (Ta) | 45 mOhm @ 3.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1010-3 | 3-XFDFN |
||
IXYS |
MOSFET N-CH 1.5KV 12A TO268
|
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock6,224 |
|
MOSFET (Metal Oxide) | 1500V | 12A (Tc) | 10V | 4.5V @ 250µA | 106nC @ 10V | 3720pF @ 25V | ±30V | - | 890W (Tc) | - | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V TO-220F-3
|
Package: TO-220-3 Full Pack |
Stock41,700 |
|
MOSFET (Metal Oxide) | 500V | 4A (Tc) | 10V | 5V @ 250µA | 15nC @ 10V | 650pF @ 25V | ±30V | - | 28W (Tc) | 2 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V TO220SIS
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock5,760 |
|
MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | 4V @ 1.2mA | 40nC @ 10V | 1300pF @ 25V | ±30V | - | 45W (Tc) | 520 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 48A TO-220AB
|
Package: TO-220-3 |
Stock549,096 |
|
MOSFET (Metal Oxide) | 60V | 48A (Tc) | 5V, 10V | 2V @ 250µA | 60nC @ 5V | 2000pF @ 25V | ±16V | - | 100W (Tc) | 20 mOhm @ 24A, 10V | -65°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 12A POWER33
|
Package: 8-PowerWDFN |
Stock491,472 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta), 18A (Tc) | 4.5V, 10V | 3V @ 250µA | 23nC @ 10V | 1385pF @ 15V | ±20V | - | 2.3W (Ta), 27W (Tc) | 8 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
||
STMicroelectronics |
N-CHANNEL 600 V, 0.550 OHM TYP.,
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,552 |
|
MOSFET (Metal Oxide) | 600V | 7.5A (Tc) | 10V | 4V @ 250µA | 12.4nC @ 10V | 390pF @ 100V | ±25V | - | 85W (Tc) | 595 mOhm @ 3.75A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 6.5A TO-220F
|
Package: TO-220-3 Full Pack |
Stock11,856 |
|
MOSFET (Metal Oxide) | 600V | 6.5A (Tc) | 10V | 5V @ 250µA | 17nC @ 10V | 730pF @ 25V | ±30V | - | 33W (Tc) | 1.25 Ohm @ 3.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET N-CH 200V 0.96A SOT223
|
Package: TO-261-4, TO-261AA |
Stock20,124 |
|
MOSFET (Metal Oxide) | 200V | 960mA (Tc) | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V | - | 2W (Ta), 3.1W (Tc) | 1.5 Ohm @ 580mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
STMicroelectronics |
MOSFET N-CH 1050V 1.4A TO3PF
|
Package: TO-3P-3 Full Pack |
Stock19,368 |
|
MOSFET (Metal Oxide) | 1050V | 1.4A (Tc) | 10V | 4.5V @ 50µA | 13nC @ 10V | 180pF @ 100V | ±30V | - | 20W (Tc) | 11 Ohm @ 600mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 3.5A SSOT-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock22,454,484 |
|
MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 779pF @ 10V | ±8V | - | 1.6W (Ta) | 80 mOhm @ 3.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
||
Toshiba Semiconductor and Storage |
MOSFET NCH 30V 15A UDFNB
|
Package: 6-WDFN Exposed Pad |
Stock93,756 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 2.1V @ 100µA | 7.5nC @ 4.5V | 1130pF @ 15V | ±20V | - | 1.25W (Ta) | 8.9 mOhm @ 4A, 10V | 150°C (TA) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |