Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor |
MOSFET N-CH 25V 65A IPAK TRIMMED
|
Package: TO-251-3 Stub Leads, IPak |
Stock2,672 |
|
MOSFET (Metal Oxide) | 25V | 10.4A (Ta), 65A (Tc) | - | 2.5V @ 250µA | 21.8nC @ 10V | 1308pF @ 12V | - | - | 1.28W (Ta), 50W (Tc) | 7.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
ON Semiconductor |
MOSFET N-CH 30V 11.5A SO-8FL
|
Package: 8-PowerTDFN, 5 Leads |
Stock94,596 |
|
MOSFET (Metal Oxide) | 30V | 11.5A (Ta), 85A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 28nC @ 4.5V | 2614pF @ 12V | ±16V | - | 880mW (Ta), 48.4W (Tc) | 4.1 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
NXP |
MOSFET N-CH 30V 63A LFPAK
|
Package: SC-100, SOT-669 |
Stock4,656 |
|
MOSFET (Metal Oxide) | 30V | 63A (Tc) | 4.5V, 10V | 2V @ 1mA | 13.3nC @ 4.5V | 1565pF @ 12V | ±20V | - | 62.5W (Tc) | 9 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 5.5A 6SSOT
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock4,464 |
|
MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 20nC @ 4.5V | 1456pF @ 10V | ±12V | - | 1.6W (Ta) | 35 mOhm @ 5.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
||
Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,408 |
|
MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | ±30V | - | 125W (Tc) | 1.2 Ohm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 650V 8.5A I2PAK
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2,416 |
|
MOSFET (Metal Oxide) | 650V | 8.5A (Tc) | 10V | 5V @ 250µA | 22nC @ 10V | 900pF @ 100V | ±25V | - | 70W (Tc) | 430 mOhm @ 4.3A, 10V | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 100V 50A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock12,120 |
|
MOSFET (Metal Oxide) | 100V | 50A (Tc) | 10V | 4V @ 250µA | 166nC @ 10V | 6000pF @ 25V | ±20V | - | 180W (Tc) | 27 mOhm @ 25A, 10V | -65°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
TRANSISTOR N-CH
|
Package: - |
Stock3,328 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 60V 180A TO263-7
|
Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock3,696 |
|
MOSFET (Metal Oxide) | 60V | 180A (Tc) | 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | ±20V | - | 250W (Tc) | 1.7 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
Infineon Technologies |
MOSFET N-CH 20V 93A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock24,000 |
|
MOSFET (Metal Oxide) | 20V | 93A (Tc) | 4.5V, 10V | 2.45V @ 250µA | 27nC @ 4.5V | 2160pF @ 10V | ±20V | - | 79W (Tc) | 5.7 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
TRANSISTOR N-CH
|
Package: - |
Stock6,944 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Microsemi Corporation |
MOSFET N-CH 500V 46A T-MAX
|
Package: TO-247-3 Variant |
Stock6,192 |
|
MOSFET (Metal Oxide) | 500V | 46A (Tc) | 10V | 5V @ 2.5mA | 95nC @ 10V | 4360pF @ 25V | ±30V | - | 520W (Tc) | 100 mOhm @ 23A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
IXYS |
MOSFET N-CH 500V 44A PLUS247
|
Package: TO-247-3 |
Stock103,464 |
|
MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 4V @ 4mA | 190nC @ 10V | 7000pF @ 25V | ±20V | - | 500W (Tc) | 120 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
IXYS |
MOSFET P-CH 600V 32A TO-264
|
Package: TO-264-3, TO-264AA |
Stock4,736 |
|
MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 4V @ 1mA | 196nC @ 10V | 11100pF @ 25V | ±20V | - | 890W (Tc) | 350 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 650V 25A TO262
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock6,672 |
|
MOSFET (Metal Oxide) | 650V | 25A (Tc) | 10V | 4V @ 250µA | 26.4nC @ 10V | 1278pF @ 100V | ±30V | - | 357W (Tc) | 190 mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock75,936 |
|
MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | ±30V | - | 3.1W (Ta), 125W (Tc) | 850 mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 84A LFPAK
|
Package: SC-100, SOT-669 |
Stock2,416 |
|
MOSFET (Metal Oxide) | 30V | 84A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 20.5nC @ 10V | 1324pF @ 15V | ±20V | - | 61W (Tc) | 4.8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
STMicroelectronics |
N-CHANNEL 900 V, 2.1 OHM TYP., 3
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,696 |
|
MOSFET (Metal Oxide) | 900V | 3A | 10V | 5V @ 100µA | - | - | ±30V | Current Sensing | - | - | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 600V 5.5A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock121,164 |
|
MOSFET (Metal Oxide) | 600V | 5.5A (Tc) | 10V | 4V @ 250µA | 10nC @ 10V | 320pF @ 100V | ±25V | - | 60W (Tc) | 780 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 600V 22A TO220AB
|
Package: TO-220-3 |
Stock6,448 |
|
MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 5V @ 1.5mA | 38nC @ 10V | 2600pF @ 25V | ±30V | - | 500W (Tc) | 360 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 90A TDSON-8
|
Package: 8-PowerTDFN |
Stock2,944 |
|
MOSFET (Metal Oxide) | 100V | 11.4A (Ta), 90A (Tc) | 10V | 4V @ 110µA | 44nC @ 10V | 2900pF @ 50V | ±20V | - | 156W (Tc) | 10 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 20V TO-236AB
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,464 |
|
MOSFET (Metal Oxide) | 40V | 2.7A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 6nC @ 10V | 160pF @ 20V | ±20V | - | 490mW (Ta), 6.25W (Tc) | 75 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 600V 2A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,744 |
|
MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 4.4 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Micro Commercial Co |
N-CHANNEL MOSFET, SOT-723 PACKAG
|
Package: SOT-723 |
Stock5,728 |
|
MOSFET (Metal Oxide) | 20V | 750mA | 4.5V | 1V @ 250µA | - | 120pF @ 16V | ±12V | - | 150mW | 800 mOhm @ 450mA, 1.8V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-723 | SOT-723 |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 61.8A LFPAK
|
Package: SC-100, SOT-669 |
Stock27,822 |
|
MOSFET (Metal Oxide) | 55V | 61.8A (Tc) | 5V, 10V | 2.15V @ 1mA | 32nC @ 5V | 2880pF @ 25V | ±15V | - | 106W (Tc) | 11 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Infineon Technologies |
MOSFET N-CH 650V 39A TO-247
|
Package: TO-247-3 |
Stock87,840 |
|
MOSFET (Metal Oxide) | 650V | 39A (Tc) | 10V | 3.5V @ 1.7mA | 116nC @ 10V | 4000pF @ 100V | ±20V | - | 313W (Tc) | 75 mOhm @ 26A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Vishay Siliconix |
MOSFET P-CH 60V 1.6A 4-DIP
|
Package: 4-DIP (0.300", 7.62mm) |
Stock8,556 |
|
MOSFET (Metal Oxide) | 60V | 1.6A (Ta) | 10V | 4V @ 1µA | 19nC @ 10V | 570pF @ 25V | ±20V | - | 1.3W (Ta) | 280 mOhm @ 960mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Infineon Technologies |
MOSFET P-CH 40V 180A TO263-7
|
Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock4,512 |
|
MOSFET (Metal Oxide) | 40V | 180A (Tc) | 4.5V, 10V | 2.2V @ 410µA | 286nC @ 10V | 18700pF @ 25V | ±16V | - | 150W (Tc) | 2.4 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
IXYS |
MOSFET N-CH 100V 180A SOT-227B
|
Package: SOT-227-4, miniBLOC |
Stock19,464 |
|
MOSFET (Metal Oxide) | 100V | 180A | 10V | 4V @ 8mA | 360nC @ 10V | 9100pF @ 25V | ±20V | - | 600W (Tc) | 8 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
Vishay Siliconix |
MOSFET N-CH 20V 3.9A SOT23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,403,964 |
|
MOSFET (Metal Oxide) | 20V | 3.9A (Ta) | 1.8V, 4.5V | 850mV @ 250µA | 12nC @ 4.5V | - | ±8V | - | 750mW (Ta) | 31 mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |